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Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip

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dc.contributor Massachusetts Institute of Technology. Research Laboratory of Electronics
dc.contributor Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.creator Peyskens, Frederic Olivier
dc.creator Chakraborty, Chitraleema
dc.creator Englund, Dirk R.
dc.date 2021-02-02T17:27:21Z
dc.date 2021-02-02T17:27:21Z
dc.date 2019-09
dc.date 2020-12-14T17:28:51Z
dc.date.accessioned 2023-03-01T18:09:16Z
dc.date.available 2023-03-01T18:09:16Z
dc.identifier 2041-1723
dc.identifier https://hdl.handle.net/1721.1/129632
dc.identifier Peyskens, Frédéric et al. “Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip.” Nature Communications, 10, 1 (September 2019): 4435 © 2019 The Author(s)
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/278953
dc.description Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.
dc.description United States. Army Research Office. Multidisciplinary University Research Initiative (Grant W911NF-18-1-0431)
dc.format application/pdf
dc.language en
dc.publisher Springer Science and Business Media LLC
dc.relation 10.1038/S41467-019-12421-0
dc.relation Nature Communications
dc.rights Creative Commons Attribution 4.0 International license
dc.rights https://creativecommons.org/licenses/by/4.0/
dc.source Nature
dc.title Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip
dc.type Article
dc.type http://purl.org/eprint/type/JournalArticle


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