| dc.contributor |
Massachusetts Institute of Technology. Department of Mechanical Engineering |
|
| dc.contributor |
Liao, Bolin |
|
| dc.contributor |
Qiu, Bo |
|
| dc.contributor |
Zhou, Jiawei |
|
| dc.contributor |
Huberman, Samuel C. |
|
| dc.contributor |
Chen, Gang |
|
| dc.creator |
Liao, Bolin |
|
| dc.creator |
Qiu, Bo |
|
| dc.creator |
Zhou, Jiawei |
|
| dc.creator |
Esfarjani, Keivan |
|
| dc.creator |
Chen, Gang |
|
| dc.creator |
Huberman, Samuel C. |
|
| dc.date |
2015-03-27T17:04:12Z |
|
| dc.date |
2015-03-27T17:04:12Z |
|
| dc.date |
2015-03 |
|
| dc.date |
2014-11 |
|
| dc.date |
2015-03-18T22:00:07Z |
|
| dc.date.accessioned |
2023-03-01T18:08:24Z |
|
| dc.date.available |
2023-03-01T18:08:24Z |
|
| dc.identifier |
0031-9007 |
|
| dc.identifier |
1079-7114 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/96221 |
|
| dc.identifier |
Liao, Bolin, et al. "Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study." Phys. Rev. Lett. 114, 115901 (March 2015). © 2015 American Physical Society |
|
| dc.identifier |
https://orcid.org/0000-0002-0898-0803 |
|
| dc.identifier |
https://orcid.org/0000-0003-0865-8096 |
|
| dc.identifier |
https://orcid.org/0000-0002-3968-8530 |
|
| dc.identifier |
https://orcid.org/0000-0002-9872-5688 |
|
| dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/278898 |
|
| dc.description |
The electron-phonon interaction is well known to create major resistance to electron transport in metals and semiconductors, whereas fewer studies are directed to its effect on phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 10[superscript 19] cm[superscript −3] (the reduction reaches up to 45% in p-type silicon at around 10[superscript 21] cm[superscript −3]), a range of great technological relevance to thermoelectric materials. |
|
| dc.format |
application/pdf |
|
| dc.language |
en |
|
| dc.publisher |
American Physical Society |
|
| dc.relation |
http://dx.doi.org/10.1103/PhysRevLett.114.115901 |
|
| dc.relation |
Physical Review Letters |
|
| dc.rights |
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. |
|
| dc.rights |
American Physical Society |
|
| dc.source |
American Physical Society |
|
| dc.title |
Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study |
|
| dc.type |
Article |
|
| dc.type |
http://purl.org/eprint/type/JournalArticle |
|