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High-speed graphene interconnects monolithically integrated with CMOS ring oscillators operating at 1.3GHz

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dc.contributor Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.contributor Kong, Jing
dc.contributor Lee, Kyeong-Jae
dc.contributor Kong, Jing
dc.creator Chen, Xiangyu
dc.creator Lee, Kyeong-Jae
dc.creator Akinwande, Deji
dc.creator Close, Gael F.
dc.creator Yasuda, Shinichi
dc.creator Paul, Bipul
dc.creator Fujita, Shinobu
dc.creator Kong, Jing
dc.creator Wong, H. -S. Philip
dc.date 2012-07-27T15:27:06Z
dc.date 2012-07-27T15:27:06Z
dc.date 2010-03
dc.date 2009-12
dc.date.accessioned 2023-03-01T18:07:55Z
dc.date.available 2023-03-01T18:07:55Z
dc.identifier 978-1-4244-5640-6
dc.identifier 978-1-4244-5639-0
dc.identifier http://hdl.handle.net/1721.1/71870
dc.identifier Xiangyu Chen et al. “High-speed Graphene Interconnects Monolithically Integrated with CMOS Ring Oscillators Operating at 1.3GHz.” IEEE, 2009. 1–4. © Copyright 2009 IEEE
dc.identifier https://orcid.org/0000-0003-0551-1208
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/278868
dc.description We have successfully experimentally integrated graphene interconnects with commercial 0.25 ¿m technology CMOS ring oscillator circuit using conventional fabrication techniques, and demonstrated high speed on-chip graphene interconnects that operates above 1 GHz.
dc.format application/pdf
dc.language en_US
dc.publisher Institute of Electrical and Electronics Engineers (IEEE)
dc.relation http://dx.doi.org/10.1109/IEDM.2009.5424293
dc.relation 2009 IEEE International Electron Devices Meeting (IEDM)
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.source IEEE
dc.title High-speed graphene interconnects monolithically integrated with CMOS ring oscillators operating at 1.3GHz
dc.type Article
dc.type http://purl.org/eprint/type/ConferencePaper


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