| dc.contributor |
MIT Materials Research Laboratory |
|
| dc.contributor |
Massachusetts Institute of Technology. Department of Materials Science and Engineering |
|
| dc.contributor |
Massachusetts Institute of Technology. Microphotonics Center |
|
| dc.contributor |
Wang, Jianfei |
|
| dc.contributor |
Hu, Juejun |
|
| dc.contributor |
Becla, Piotr |
|
| dc.contributor |
Agarwal, Anuradha Murthy |
|
| dc.contributor |
Kimerling, Lionel C. |
|
| dc.creator |
Wang, Jianfei |
|
| dc.creator |
Hu, Juejun |
|
| dc.creator |
Becla, Piotr |
|
| dc.creator |
Kimerling, Lionel C. |
|
| dc.creator |
Agarwal, Anuradha Murthy |
|
| dc.date |
2013-07-30T18:34:43Z |
|
| dc.date |
2013-07-30T18:34:43Z |
|
| dc.date |
2011-10 |
|
| dc.date |
2011-05 |
|
| dc.date.accessioned |
2023-03-01T18:04:35Z |
|
| dc.date.available |
2023-03-01T18:04:35Z |
|
| dc.identifier |
00218979 |
|
| dc.identifier |
1089-7550 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/79729 |
|
| dc.identifier |
Wang, Jianfei, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study.” Journal of Applied Physics 110, no. 8 (2011): 083719. © 2011 American Institute of Physics |
|
| dc.identifier |
https://orcid.org/0000-0002-7233-3918 |
|
| dc.identifier |
https://orcid.org/0000-0002-0769-0652 |
|
| dc.identifier |
https://orcid.org/0000-0002-3913-6189 |
|
| dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/278652 |
|
| dc.description |
In this paper, we report large mid-wave infrared photoconductivity in highly textured, nanocrystalline PbTe films thermally evaporated on Si at room temperature. Responsivity as high as 25 V/W is measured at the 3.5 μm wavelength. The large photoconductivity is attributed to the oxygen incorporation in the films by diffusion. Carrier concentration as low as 10[superscript 17] cm[superscript −3] is identified to be the consequence of Fermi level pinning induced by the diffused oxygen. The successful demonstration of IR-sensitive PbTe films without the need for high-temperature processing presents an important step toward monolithic integration of mid-wave PbTe infrared detectors on Si read-out integrated circuits (ROICs). |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.publisher |
American Institute of Physics (AIP) |
|
| dc.relation |
http://dx.doi.org/10.1063/1.3653832 |
|
| dc.relation |
Journal of Applied Physics |
|
| dc.rights |
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. |
|
| dc.source |
MIT web domain |
|
| dc.title |
Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study |
|
| dc.type |
Article |
|
| dc.type |
http://purl.org/eprint/type/JournalArticle |
|