| dc.contributor |
Gerald Lucovsky, Committee Chair |
|
| dc.contributor |
Jon-Paul Maria, Committee Member |
|
| dc.contributor |
Robert Nemanich, Committee Member |
|
| dc.contributor |
Hans Hallen, Committee Member |
|
| dc.creator |
Hinkle, Christopher |
|
| dc.date |
2010-04-02T19:16:46Z |
|
| dc.date |
2010-04-02T19:16:46Z |
|
| dc.date |
2005-07-27 |
|
| dc.date.accessioned |
2023-02-28T17:06:51Z |
|
| dc.date.available |
2023-02-28T17:06:51Z |
|
| dc.identifier |
etd-07252005-181136 |
|
| dc.identifier |
http://www.lib.ncsu.edu/resolver/1840.16/5623 |
|
| dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/265466 |
|
| dc.description |
Stacked gate dielectrics using high-k materials were deposited using a RPECVD method. Aluminum oxide, hafnium oxide, hafnium silicate, nitrided films of each of the above, and multi-layer stacks of the above as well as silicon dioxide were deposited. These films were analyzed using AES, XPS, NRA, RBS, SIMS, XAS, cathodoluminescence, spectroscopic ellipsometry, capacitance-voltage, and current-voltage techniques. Fixed charge was found to be present in all high-k films and was practically impossible to reduce in a significant way. Nitridation of the films was unsuccessful at reducing the charge, but was helpful in enhancing some electrical measurements. Sandwich stack structures showed enhanced tunneling which led to a novel approach of calculating the E[subscript b]-m[subscript eff] product in the transmission probability equation. This tunneling also gives some clues as to which types of gate stacks cannot be used in technology. Gate stacks containing an HfO₂ layer below an Al₂O₃ layer were studied and also showed enhanced tunneling. Analysis of this tunneling found two significant trapping sites in the HfO₂ layer, one located ~0.5 eV below the HfO₂ conduction band offset and the other located in the Si bandgap. Fixed charge reduction was again expected in these laminates, but again remained despite theoretical predictions. |
|
| dc.rights |
I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
|
| dc.subject |
aluminum oxide |
|
| dc.subject |
stacked dielectrics |
|
| dc.subject |
hafnium oxide |
|
| dc.subject |
high-k |
|
| dc.subject |
fixed charge |
|
| dc.subject |
tunneling |
|
| dc.title |
Fixed Charge Reduction and Tunneling in Stacked Dielectrics |
|